Consumer demand for—and reliance on—smarter, 功能丰富的 connected IoT devices continues to grow, with 5G and the broader coverage and transformational user experiences it promises poised to fuel still more demand. 与需求, 然而, comes the challenge of delivering increasingly complex IoT devices while reducing the 成本 and power consumption.
Audio & 显示
More immersive AV/VR and mixed-reality experiences. Ultra-high resolution display and advanced imaging technology that make stunning visual detail and color possible, 在家里，在路上. 更智能的音频, hearable devices and wearable devices that deliver advanced features with worry-free battery life. Consumer 预期 for these products has never been higher, and GlobalFoundries® (GF®) is ready with an application-optimized portfolio of 解决方案 to help chip designers meet, 甚至打, 预期.
Smart audio/hearable SoCs using 22FDX® RF with eMRAM
Best-in-class leakage and power benefits that can extend battery life up to twofold combined with a rich feature set make 22FDX® RF 解决方案 from GlobalFoundries® (GF®) a superior choice for true wireless stereo (TWS) SoC applications. Designers can take advantage of exceptional RF 性能 for seamless wireless connectivity, 性能 and area-optimized digital elements for enhanced AI capability and an optimized eMRAM that can replace embedded flash for area and power savings.
集成, single-chip 解决方案 built on 22FDX® RF enable designers to reduce the BOM for smart audio/hearables by > 10 chips.
22FDX® RF offers superior active power (0.4 V), ultra-low leakage (<1 pA/µm), and excellent area efficiency (> 5M gates/mm2), combined with industry-leading analog capabilities (noise, 不匹配, 短沟道效应).
22FDX® is an outstanding choice for single-chip TWS 解决方案, enabling designers to take advantage of superior RF PA 性能, LDMOS (5 V-6.5 V) for integrating the battery charger and power management features and a qualified eMRAM solution to enhance the user experience.
22至于®, designers leverage the silicon-validated elements, including low leakage and low power design libraries, adaptive body bias for power-state throttling and a wide range of memory options (OTP/MTP/eMRAM)—along with connectivity and security IP—for differentiation and a time to market advantage.
Audio CODECs, pre-amps and microphone controllers using 22FDX® and 55 nm BCDLite®
GlobalFoundries® (GF®) 22FDX® (22nm FD-SOI) 解决方案 singularly deliver both high 性能 and low power, offering best-in-class leakage and dramatically extending battery life. 22FDX® features enhanced noise 性能 and modeling to minimize unwanted background noise. Low flicker noise device properties enable audio pre-amp integration, and 5 V LDMOS allows for direct battery connect for battery life optimization. Chip designers can also take advantage of magneto resistive non-volatile memory (eMRAM) for simple, 高容量上存储, 具有高性能和耐力, 所有这些都在一个设备中.
GF 55 nm BCDLite 解决方案 are optimized for products requiring 成本 efficient, 混合信号(A/D)能力, 在对空间的设计. It supports audio/mic controller applications across a range of voltages, from 0.9 V to 30 V, to meet high dynamic-range requirements. The solution combines low-power logic, 低漏源电阻, advanced power monitoring and embedded memory features.
Processing a music stream with active noise cancellation consumes less than 10 percent of GAP9 [Greenwaves’ hearables platform] resources, leaving plenty of headroom for dramatically improving the audio comfort or other new cutting-edge features, at the same time simplifying their development. 女朋友的22个社®平台, 以其令人难以置信的性能, 超低功率容量, 低漏电流, 和灵活性, was instrumental for enabling us to hit our 性能 targets.
With superior active power and ultra-low leakage (<1 pA/µm) capabilities, 22FDX® provides significant power advantages, 包括一个0.4 V Vdd operating voltage, while also delivering excellent area efficiency (> 5M gates/mm2).
低R和超低RDSon power FETs on 55 nm BCDLite provide a 30% to 47% reduction in on-resistance compared to previous GF BCDLite processes for die-成本 and conversion efficiency advantages.
22FDX® enables designers to leverage silicon-validated elements, including adaptive body bias for power-state throttling and a wide range of memory options (OTP/MTP/eMRAM)—along with connectivity and security IP—for differentiation and a time-to-market advantage. GF 55 nm BCDLite 解决方案 are in high-volume production and feature world-class D0 (< 0.04 def /2)缺陷密度.
Today’s IoT devices are enhanced by new levels intelligence. And the sophistication of these devices continues to increase dramatically as the demand for smart features like face, 语音和物体识别能力增长, and as processing and intelligent reaction move to the edge. All while protection of the user’s digital identity remains a critical concern.
GlobalFoundries® (GF®) understands that the associated ultra-low power, high-性能 and security requirements critical to enabling these value-optimized, smarter consumer IoT devices is top of mind for semiconductor chip designers, and is ready with a portfolio of processing-specific 解决方案 to choose from.
——史蒂夫·泰格(Steve Teig)， Perceive公司CEO
Consumer 物联网单片机 using 22FDX® FD-SOI & 40/110/150纳米块状CMOS
GlobalFoundries® (GF®) offers a range of purpose-optimized consumer IoT MCU 解决方案, 使设计师能够满足该区域, 性能, power and 成本 targets for their hardware.
More than 100 million 22FDX-based 物联网单片机 have been shipped.
27 MCU new product introductions use 22FDX®, with 100% first time prototype success.
女朋友的40纳米, 110 nm和150 nm溶液, 构建在大型CMOS平台上, 提供高价值, 功能丰富的, power-optimized and low mask-count options for developing 成本-sensitive consumer 物联网单片机. Designers can take advantage of supplier integrity for a time to market advantage.
22FDX® offers a combination of full SoC integration (eMRAM, analog power and RF elements on one chip), logic scaling (for AI and security features) for > 20% smaller footprint* and lower BOM 成本s. The unique 22FDX® SOI architecture gives designers additional power mode throttling capabilities with easy to use back-gate biasing 解决方案 to reduce power > 50%* to extend battery life without compromising 性能.
A rich portfolio of MCU-optimized IP and reference designs helps clients stand out from their competition, 更快地进入市场.
Edge AI accelerators using 12LP/12LP+ and 22FDX®
The 12LP/12LP+ FinFET and 22FDX® FD-SOI edge AI accelerator 解决方案 from GlobalFoundries® (GF®) are optimized to reduce latency and actionable response times, which enable enhanced security and data privacy by managing data at the edge. The purpose-built 解决方案 combine a spectrum of power, 性能 and area advantages that enable chip designers to choose the best fit for their standalone or embedded AI SoCs.
22FDX® is up to 1000x more power-efficient than current industry edge AI accelerator offerings*
12LP/12LP+ offers AI-optimized 性能 with same global routing capability as 7 nm, 所以你可以更聪明地设计, 不是小.
GF 12LP/12LP+ and 22FDX® 解决方案 are optimized to deliver the 性能 horsepower you need to handle the demands of AI inferencing at the edge, 而不是在数据中心.
Leverage the low dynamic power and best-in-class leakage power from 22FDX®, excellent thermal 性能 from 12LP/12LP+ and a low-voltage SRAM available with 12LP+ and 22FDX® to minimize power consumption in AC-wired or battery-powered devices.
Take advantage of a combination of AI-tuned features, including the AI reference package available with 12LP/12LP+ and the eMRAM AI storage core available in automotive grade 1-qualified 22FDX® to stand out from your competition.
*Assumes typical power consumption of edge device is ten to hundreds of watts. 22FDX® can achieve 20 milliwatts power consumption.
While wireless connectivity is becoming pervasive, 蓝牙标准的发展, 全球定位系统(GPS), Wi-Fi and Zigbee combined with the accelerating rollout of 5G hardware add complexity. Keeping pace with the challenges of handling multiple standards in shrinking form factors—with battery life measured in days, not hours—requires new avenues of innovation in wireless SoC architecture.
By 2025, there will more than 40 billion connected IoT devices.*
* IDC的数据,2020年6月, 国际数据公司(idc).com/getdoc.jsp?containerId = prUS45213219
Wireless connectivity using 22FDX® RF
Consumer IoT hardware is 性能, power, area and 成本 sensitive. All while being reliable enough to stand up to constant use.
22FDX® RF 解决方案 from GlobalFoundries® (GF®), 基于22纳米FD-SOI平台, enable designers to take advantage of superior power efficiency and 性能 while integrating multiple features into a single chip for significant area and BOM 成本 advantages. And because 22FDX® is automotive grade 1 qualified, the 解决方案 offer the high 可靠性 that consumer IoT applications rely on.
22FDX® RF enables the industry’s only single-chip modem for > 20% area savings, while adaptive body bias gives designers the ability to cut dynamic power by 30% and leakage power by 60%.*
Take advantage of the IoT-specific capabilities and features available with 22FDX® RF, including best-in-class RF sensitivity, eMRAM and direct battery connect PMIC integration.
Leverage the FDXcelerator™ ecosystem, 一个全面的, silicon-validated IP portfolio and reference designs to differentiate today, and tap into the strong FDX™ roadmap to 12 nm for planning next-gen, future-ready芯片.
*Area reduction compared to 22 nm bulk CMOS. Dynamic and leakage power reduction compared to 12 nm FinFET.